dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 1 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut 20v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max @ t a = 25 c (note 4) -20v 495m @ v gs = -4.5v -0.59a 690m @ v gs = -2.5v -0.50a 960m @ v gs = -1.8v -0.42a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? portable electronics features and benefits ? footprint of just 3mm 2 ? less than half the size of sot23 ? 0.8mm profile ? ideal for low profile applications ? low gate threshold voltage ? fast switching speed ? esd protected gate 3kv ? totally lead-free & fully rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot523 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ; solderable per mil-std-202, method 208 ? weight: 0.002 grams (approximate) ordering information (note 3) part number marking reel size (inches) tape width (mm) quantity per reel DMP21D0UT-7 pbc 7 8 3,000 notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free. 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot523 equivalent circuit top view internal schematic bottom view source gate protection diode gate drain g s d esd protected to 3kv pbc ym pbc = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september)
dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 2 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current steady state t a = 25c (note 4) t a = 85c (note 4) t a = 25c (note 5) i d -0.59 -0.42 -0.65 a pulsed drain current (note 6) i dm -5.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) p d 0.24 w power dissipation (note 5) p d 0.33 w thermal resistance, junction to ambient (note 4) r ja 525 c/w thermal resistance, junction to ambient (note 5) r ja 383 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout 5. device mounted on 25mm x 25mm fr-4 pcb with high coverage of 2oz copper 6. device mounted on minimum recommended pad layout test board, 10 p s pulse duty cycle = 1%. 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , pulse duration time (sec) fig. 1 single pulse maximum power dissipation 1 0 1 2 3 4 5 6 7 8 9 10 p (pk), p eak t r ansien t p o we r (w) single pulse r = 380c/w r (t) = r(t) * r t - t = p * r (t) t t t t ja ja ja ja ja 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 2 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 t r (t) = r(t) * t ja r r = 380c/w t t ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9
dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 3 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1 p a v ds = -20v, v gs = 0v gate-source leakage i gss - - 10 p a v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) - -0.7 - v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - - 495 m : v gs = -4.5v, i d = -400ma 690 v gs = -2.5v, i d = -300ma 960 v gs = -1.8v, i d = -100ma forward transfer admittance |y fs | 50 - - ms v ds = -3v, i d = -300ma diode forward voltage v sd - - -1.2 v v gs = 0v, i s = -300ma dynamic characteristics input capacitance c iss - 76.5 - pf v ds = -10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 13.7 - pf reverse transfer capacitance c rss - 10.7 - pf gate resistance r g - 195 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g 1.5 - nc v gs = -8v,v ds = -15v,i d = -1a total gate charge q g - 1.0 - nc v gs = -4.5v, v ds = -15v, i d = -1a gate-source charge q g s - 0.2 - nc gate-drain charge q g d - 0.3 - nc turn-on delay time t d ( on ) - 7.1 - ns v ds = -10v, -i d = 1a v gs = -4.5v, r g = 6 ? turn-on rise time t r - 8.0 - ns turn-off delay time t d ( off ) - 31.7 - ns turn-off fall time t f - 18.5 - ns notes: 7. short duration pulse test used to minimize self-heating effect. 012345 fig. 3 typical output characteristic -v , drain-source voltage (v) ds 0 0.5 1.0 1.5 2.0 -i , d r ain c u r r en t (a) d v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.5v gs v = -4.0v gs v = -1.8v gs 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 4 typical transfer characteristic -v , gate-source voltage (v) gs 0 0.5 1.0 1.5 2.0 -i , d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds
dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 4 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut 0 0.4 0.8 1.2 1.6 2.0 fig. 5 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.4 0.8 1.2 1.6 2.0 -i , drain current (a) d fig. 6 typical on-resistance vs. drain current and temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs fig. 7 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1. 7 r , d r ai n -s o u r c e on-resistance (normalized) dson v = -2.5v i = -250ma gs d v = -5.0v i = -500ma gs d fig. 8 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 r , d r ain-s o u r c e o n- r esis t an c e ( ) dson v = -5.0v i = -500ma gs d v = -2.5v i = -250ma gs d fig. 9 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) 1.4 i = -1ma d i = -250a d 0.4 0.6 0.8 1.0 1.2 fig. 10 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -i , s o u r c e c u r r e n t (a) s t = 25c a
dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 5 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut 04 8121620 fig. 11 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 1,000 10,000 -i , leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a 02 468 v , gate-source voltage (v) gs fig.12 leakage current vs. gate-source voltage 0.1 1 10 100 1,000 10,000 100,000 i, leaka g e c u r r en t (na) gss t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 02 468 v , gate-source voltage (v) gs fig.13 leakage current vs. gate-source voltage 0.1 1 10 100 1,000 10,000 100,000 i, leaka g e c u r r en t (na) gss t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 1,000 0 2 4 6 8 101214161820 100 10 1 -v , drain-source voltage (v) fig. 14 typical junction capacitance ds c , j u n c t i o n c a p a c i t an c e (p f ) t c oss c rss f = 1mhz c iss 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 q , total gate charge (nc) fig. 15 gate-charge characteristics g -v , g a t e-s o u r c e v o l t a g e (v) gs
dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 6 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut package outline dimensions suggested pad layout sot523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d ? ? 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 ? all dimensions in mm dimensions value (in mm) z 1.8 x 0.4 y 0.51 c 1.3 e 0.7 a m j l d b c h k g n x e y c z
dmp21d0ut d atasheet number: ds35297 rev. 2 - 2 7 of 7 www.diodes.com march 2012 ? diodes incorporated a product line o f diodes incorporated dmp21d0ut important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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